Possible Generation of Transient THz Electronic Drift Effects in a Semiconductor by a High Electric Field
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چکیده
Using the Boltzmann equation formalism for a simple semiconductor model, the transient drift velocity of the electrons is computed when a high uniform electric field is suddenly turned on. Rapid oscillations superimposed on an overshoot behaviour are obtained. It is showed that this behaviour results from the combined action of the field and of the electron-phonon
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تاریخ انتشار 2016